Title of article :
Positive-plasma-bias method for plasma-based ion implantation and deposition
Author/Authors :
Ikehata، نويسنده , , T. and Sasaki، نويسنده , , R. and Tanaka، نويسنده , , T. and Yukimura، نويسنده , , K.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Pages :
11
From page :
2881
To page :
2891
Abstract :
The positive-plasma-bias (PPB) method has been explored as a new option for the plasma-based ion implantation and deposition (PBII&D). In the PPB method, plasma is biased positive with respect to a target which is at ground potential. While it offers benefits such as handling of target during PBII&D processing and in-situ process monitoring, special considerations are needed to meet the necessary PPB conditions. In the present paper, fundamentals and applications of the PPB method that has been performed for years by the authorʹs group are presented: First the working principle, geometry, potential and current distributions are explained. Then special features, possible merits and demerits are discussed. Finally the environment-friendly plasma cleaning and the dual-plasma ion process for insulator processing are presented as applications of the PPB method.
Keywords :
Ion sheath , Plasma-based ion implantation and deposition , plasma potential , Positive-plasma-bias
Journal title :
Surface and Coatings Technology
Serial Year :
2010
Journal title :
Surface and Coatings Technology
Record number :
1822390
Link To Document :
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