High-speed deposition of Y–Si–O films by laser chemical vapor deposition using Nd:YAG laser

Y–Si–O films were prepared by laser chemical vapor deposition (LCVD) with a Nd:YAG laser using TEOS (tetraethyl orthosilicate) and Y(dpm)3 precursors. The effects of laser power (PL), deposition temperature (Tdep) and total chamber pressure (Ptot) on the phase, microstructure and deposition rate of Y–Si–O films were investigated. At PL < 102 W (Tdep < 1140 K), amorphous Y–Si–O films were obtained independent of Ptot. At Ptot = 0.6 kPa, mixture phase films of Y2SiO5 (the X1 phase) and Y2Si2O7 (the α, β, δ and y phases) were obtained at PL = 102 W (Tdep = 1210 K), while single phase X1–Y2SiO5 films were prepared at PL > 139 W (Tdep > 1280 K). Y2Si2O7 mixture phase films were obtained at Ptot = 3.5 kPa and Y2Si2O7 and Y2SiO5 (the X2 phase) mixture phase films were obtained at Ptot = 7.5 kPa independent of Tdep. Amorphous Y–Si–O films showed a dense, glassy microstructure. Faceted columnar grains grew on the Y–Si–O films at Ptot = 0.6 kPa, whereas rounded cauliflower-like grains grew at Ptot = 7.5 kPa. The Rdep increased with increasing PL and Tdep and reached a maximum of 430 μm h−1 at Ptot = 0.6 kPa, PL = 186 W and Tdep = 1310 K.