Preparation of Ca–Si–O films by chemical vapor deposition

Ca–Si–O films were prepared by chemical vapor deposition using calcium dipivaloylmethanates (Ca(dpm)2) and tetraethyl orthosilicate (TEOS). The effects of the Si to Ca precursor molar ratio (RSi/Ca) and the substrate temperature (Tsub) on the crystal phase, microstructure and deposition rate of Ca–Si–O films were investigated. Three main phases, i.e., CaSiO3, Ca2SiO4 and Ca3SiO5, were obtained along with the CaO and amorphous phases. At Tsub = 923 to 1023 K and RSi/Ca = 49, Ca2SiO4 film in a single phase was obtained. The microstructure was granular and changed from a cauliflower-like to a granular type with increasing RSi/Ca. The maximum deposition rate was 240 μm h−1 at Tsub = 1323 K and RSi/Ca = 29.