Role of vapor pressure of 1,4-bis(trimethylsilyl)benzene in developing silicon carbide thin film using a plasma-assisted liquid injection chemical vapor deposition process

The temperature dependence equilibrium vapor pressure (pe)T data yielded a straight line when ln(pe) was plotted against the reciprocal temperature in the range of 312.82–367.12 K, leading to a standard enthalpy of sublimation (ΔsubH°) value of 68.2 ± 0.8 kJ mol− 1 for 1,4-bis(trimethylsilyl)benzene (TMSB). From the depression of the melting point in the DTA-mode, the standard enthalpy of fusion (ΔfusH°) was found to be 26.9 ± 2.5 kJ mol− 1. A thin film of silicon carbide was grown on graphite substrate at 573 K using TMSB or bis(trimethylsilyl)acetylene as precursors. The deposited films were characterized by scanning electron microscopy and energy dispersive X-ray analysis for their composition and morphology.