High-speed epitaxial growth of (100)-oriented CeO2 film on r-cut sapphire by laser chemical vapor deposition

(100)-oriented CeO2 film was prepared on r-cut sapphire ( ( 1 1 ¯ 02 ) Al2O3) by laser chemical vapor deposition at laser powers from 123 to 182 W with deposition temperatures ranging from 1042 to 1122 K. The (100) CeO2 films grew epitaxially on ( 1 1 ¯ 02 ) Al2O3 substrate with the in-plane orientation relationship of CeO2 [010] // Al2O3 [ 1 ¯ 101 ] and CeO2 [001] // Al2O3 [ 11 2 ¯ 0 ] . The surface morphology of the CeO2 films was characterized by elongated grains with truncated pyramidal cap. The deposition rate of the CeO2 film was 10–15 μm h− 1, about 10–15 times higher than those of conventional metalorganic CVD.