Title of article :
Permeation barrier coatings by inductively coupled plasma CVD on polycarbonate substrates for flexible electronic applications
Author/Authors :
Lay، نويسنده , , Eddy and Wuu، نويسنده , , Dong-Sing and Lo، نويسنده , , Shih-Yung and Horng، نويسنده , , Ray-Hua and Wei، نويسنده , , Hsiao-Fen and Jiang، نويسنده , , Liang-You and Lee، نويسنده , , Hung-Uang and Chang، نويسنده , , Yu-Yang، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Pages :
7
From page :
4267
To page :
4273
Abstract :
Silicon oxide (SiOx)/silicon nitride (SiNx) stacks and parylene thin films were deposited on flexible polycarbonate (PC) substrates using inductively coupled plasma chemical vapor deposition (ICPCVD) and a parylene reactor for permeation barrier applications. The effects of gas flow ratios on SiNx and SiOx film properties in terms of refractive index, internal stress, and water vapor transmission rate (WVTR) were investigated. It was found that the optical property and impermeability of SiNx and SiOx barrier films could be tailored by varying the gas flow ratio. The details of Ar plasma treatment effects on PC substrates in terms of contact angle, roughness, and WVTR were studied. The WVTR value of the optimum barrier structure (parylene + 3 pairs of SiOx/SiNx) could reduce to 4.74 × 10−5 g/m2/day after bending for 1000 times under a resistivity test (25 °C and 90% relative humidity). This result indicated that permeation barrier films prepared by ICPCVD could be a promising candidate for flexible electronic applications.
Keywords :
Silicon nitride , Silicon oxide , polycarbonate , ICPCVD , permeation
Journal title :
Surface and Coatings Technology
Serial Year :
2011
Journal title :
Surface and Coatings Technology
Record number :
1824340
Link To Document :
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