Mechanical properties of silicon-doped diamond-like carbon films prepared by pulse-plasma chemical vapor deposition

Silicon-doped diamond-like carbon (Si-DLC) films were prepared by dc pulse-plasma chemical vapor deposition (CVD), using a mixture of acetylene (C2H2) and tetramethylsilane (TMS) as the material gas. The pulse voltage was varied from − 2 to − 5 kV, and the TMS flow ratio (TMS/(C2H2 + TMS)) was varied from 0 to 40%. At a pulse voltage of − 2 kV, an increase in TMS flow ratio leads to a decrease in hardness. In contrast, at a pulse voltage of − 5 kV, an increase in TMS flow ratio leads to a slight increase in hardness. The high hydrogen concentration in the films due to an increase in TMS flow ratio promotes the formation of polymeric sp3 C―H bonds, resulting in the fabrication of soft films at a low pulse voltage of − 2 kV. However, an increase in the effect of ion peening on the growth face results in the formation of hard films at a high pulse voltage of − 5 kV. Then, at a pulse voltage of − 5 kV fabricating hard Si-DLC films, an increase in TMS flow ratio leads to an increase in the silicon content in the films, resulting in a decrease in the friction coefficient. Therefore, it is clarified that Si-DLC films fabricated by dc pulse-plasma CVD under a high pulse voltage and high TMS flow ratio exhibit high hardness and a low friction coefficient. Moreover, to investigate the friction coefficient of Si-DLC films fabricated by dc pulse-plasma CVD, films deposited by dc plasma CVD were also evaluated. To obtain the same low friction coefficient, dc pulse-plasma CVD requires less TMS than dc plasma CVD. Hence, it is also clarified that Si-DLC films can be fabricated at a low cost by dc pulse-plasma CVD.