Author/Authors :
Sarius، نويسنده , , N.G. and Lauridsen، نويسنده , , J. and Lewin، نويسنده , , E. and Lu، نويسنده , , J. and Hِgberg، نويسنده , , H. and ضberg، نويسنده , , إ. and Ljungcrantz، نويسنده , , H. and Leisner، نويسنده , , P. C. Eklund and L. Grigorian ، نويسنده , , P. and Hultman، نويسنده , , L.، نويسنده ,
Abstract :
Sputtered Ni and Ti layers were investigated as a diffusion barrier to substitute electroplated Ni between Ti–Si–C and Ti–Si–C–Ag nanocomposite coatings and Cu or CuSn substrates. Samples were subjected to thermal annealing studies by exposure to 400 °C for 11 h. Dense diffusion barrier and coating hindered Cu from diffusing to the surface. This condition was achieved for electroplated Ni in combination with magnetron-sputtered Ti–Si–C and Ti–Si–C–Ag layers deposited at 230 °C and 300 °C, and sputtered Ti or Ni layers in combination with Ti–Si–C–Ag deposited at 300 °C.
Keywords :
Titanium carbide , Nanocomposite , Physical vapor deposition (PVD) , diffusion , Barrier , Annealing
