Title of article
Copper telluride thin films grown by pulsed laser deposition
Author/Authors
F. de Moure-Flores، نويسنده , , F. and Quiٌones-Galvلn، نويسنده , , J.G. and Guillén-Cervantes، نويسنده , , A. and Hernلndez-Hernلndez، نويسنده , , A. and Olvera-Hernلndez، نويسنده , , M. de la L. and Santoyo-Salazar، نويسنده , , J. and Contreras-Puente، نويسنده , , G. and Zapata-Torres، نويسنده , , M. and Meléndez-Lira، نويسنده , , M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2013
Pages
3
From page
181
To page
183
Abstract
Copper telluride thin films were deposited by pulsed laser deposition on Corning glass substrates using powders of Cu2Te as target. Films were grown at substrate temperatures ranging from room temperature to 300 °C. The structural, compositional and electrical properties were analyzed as a function of the growth temperature. The X-ray diffraction shows that the crystalline structure of the films is strongly related to the growth temperature. The EDS analysis indicates that the stoichiometry of the CuxTe films depends on the growth temperature. For a substrate temperature of 300 °C a Cu2Te film with hexagonal phase was obtained.
Keywords
morphology , Copper telluride films , CdTe solar cells , pulsed laser deposition , Back electrode
Journal title
Surface and Coatings Technology
Serial Year
2013
Journal title
Surface and Coatings Technology
Record number
1827317
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