• Title of article

    Isotopic study on metalorganic chemical vapor deposition of manganite films

  • Author/Authors

    Nakamura، نويسنده , , Toshihiro، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2013
  • Pages
    6
  • From page
    213
  • To page
    218
  • Abstract
    Isotopic labeling experiments using 18O2 were carried out to understand the decomposition and oxidation reactions of source molecules in the metalorganic chemical vapor deposition (MOCVD) of strontium-doped lanthanum manganite films. The isotopic ratios of oxygen incorporated in the deposited films were determined by time-of-flight secondary ion mass spectrometry (TOF-SIMS) in both negative and positive secondary ion detection modes. The obtained M18O+/M16O+ (M = La, Sr, Mn) ratios showed good agreement with the corresponding 18O−/16O− ratios. The oxygen incorporation from the oxidant gas (18O2) to the strontium oxide films is dominant under typical deposition conditions, while the majority of oxygen in the lanthanum oxide films originates from the ligands of the source molecules. In the complex oxide film deposition, an interaction occurred with another metal source molecules in the film deposition reaction. As a result, about three quarters of MO bonds of the original source molecules were preserved in the La0.7Sr0.3MnO3 film formation.
  • Keywords
    isotope labeling , TOF-SIMS , 18O2 , MOCVD , Manganite
  • Journal title
    Surface and Coatings Technology
  • Serial Year
    2013
  • Journal title
    Surface and Coatings Technology
  • Record number

    1828474