Title of article :
Development of transparent conductive Mg and Ga co-doped ZnO thin films: Effect of Mg concentration
Author/Authors :
Shin، نويسنده , , Seung Wook and Agawane، نويسنده , , G.L. and Kim، نويسنده , , In Young and Jo، نويسنده , , Seung Hyun and Kim، نويسنده , , Min Sung and Heo، نويسنده , , Gi-Seok and Kim، نويسنده , , Jin Hyeok and Lee، نويسنده , , Jeong Yong، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Abstract :
Transparent conductive Mg and Ga co-doped ZnO (MGZO) thin films were prepared on glass substrates by RF magnetron sputtering technique. The effect of Mg concentration from 0 to 15 at% on the structural, chemical, morphological, optical and electrical properties of MGZO thin films was investigated. X-ray diffraction studies showed that the pure ZnO, Mg-doped ZnO (MZO) and MGZO thin films were grown as a polycrystalline hexagonal wurtzite phase without secondary phase. The 2θ angle position of the (0002) peak of the MZO and MGZO thin films was shifted towards a higher angle with increasing Mg concentration. A typical survey XPS spectrum of the MGZO thin films confirmed the presence of Mg, Ga, Zn and O in the MGZO films. The MGZO thin films had a smoother surface morphology than those of ZnO and MZO. The MGZO thin film deposited at Mg concentration of 5 at% showed the widest optical band gap energy of 3.75 eV and the lowest electrical resistivity of 6.89 × 10− 4 Ωcm. However, the electrical and optical characteristics of the MGZO thin films deposited over 5 at% Mg concentration were deteriorated with increasing Mg concentration.
Keywords :
Transparent conducting oxide (TCO) , Mg and Ga co-doped ZnO (MGZO) , Thin films , Band gap engineering , RF magnetron sputtering
Journal title :
Surface and Coatings Technology
Journal title :
Surface and Coatings Technology