Author/Authors :
Hernلndez، نويسنده , , S.C. and Wheeler، نويسنده , , V.D. and Osofsky، نويسنده , , M.S. and Jernigan، نويسنده , , G.G. and Nagareddy، نويسنده , , V.K. and Nath، نويسنده , , R. A. C. Lock، نويسنده , , E.H. and Nyakiti، نويسنده , , L.O. and Myers-Ward، نويسنده , , R.L. and Sridhara، نويسنده , , K. and Horsfall، نويسنده , , A.B. and Eddy Jr.، نويسنده , , C.R. and Gaskill، نويسنده , , D.K. and Walton، نويسنده , , S.G.، نويسنده ,
Abstract :
Epitaxial graphene is promising material for future graphene-based applications including high frequency devices and chemical/biological sensors. Modifying the surface chemistry of graphene allows one to control its properties and thus provides a promising route towards further broadening the device application space for this unique material. Herein, we demonstrate the use of electron beam generated plasmas as a route towards controlled oxygen doping of epitaxial graphene. X-ray photoelectron spectroscopy, Raman spectroscopy and electrical measurements are used to track the oxygen incorporation and its influence on the structural and electrical properties of epitaxial graphene.
Keywords :
graphene , Functionalization , Hall effect , Plasma modification , Electrical characterization
