Author/Authors :
Mercier، نويسنده , , Frédéric and Coindeau، نويسنده , , Stéphane and Lay، نويسنده , , Sabine and Crisci، نويسنده , , Alexandre and Benz، نويسنده , , Matthieu and Encinas، نويسنده , , Thierry and Boichot، نويسنده , , Raphaël and Mantoux، نويسنده , , Arnaud and Jimenez، نويسنده , , Carmen and Weiss، نويسنده , , François and Blanquet، نويسنده , , Elisabeth، نويسنده ,
Abstract :
Synthesis of thin niobium nitride (NbN) layers by High Temperature Chemical Vapor Deposition (HTCVD) is presented and the crystallographic orientations are investigated during heteroepitaxial growth on (0001)Al2O3, (0001)AlN template and 11 2 ¯ 0 Al 2 O 3 . The HTCVD NbN layers are ex-situ characterized by means of X-ray diffraction (XRD) methods, Raman spectroscopy and Transmission Electron Microscopy (TEM). Depending on the deposition temperature, hexagonal NbN or fcc (face-centered cubic) δ-NbN is obtained. Orientation relationships between the fcc δ-NbN layer with respect to the substrates are given. We discuss the role of an AlN layer as a possible protective layer of the sapphire for the synthesis of fcc δ-NbN.
Keywords :
niobium nitride , Aluminium nitride , High Temperature CVD , III–V heteroepitaxy
