Title of article :
Interstitial hydrogen in ZnO and BeZnO
Author/Authors :
Kong، نويسنده , , F.T. and Tao، نويسنده , , H.J. and Gong، نويسنده , , H.R.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Pages :
9
From page :
5974
To page :
5982
Abstract :
First principles calculations show that for both ZnO and BeZnO phases, H prefers the positive charge state and would bring about n-type conductivity as a donor, while H0 and H− are energetically unfavorable with positive heat of formation. Calculation also reveals that H+ would probably occupy both bond-centered and anti-bonding sites due to a big migration barrier of site diffusion, which could therefore give a reasonable explanation to the experimental controversy regarding the location of H+ in the literature. Interestingly, the addition of Be could increase the stability and migration barrier of H+ in ZnO, and such an effect would be attributed to a stronger chemical bonding around the H atom formed in BeZnO. In addition, it is found that all the H+, H0, and H− states would bring about a decrease of the band gap of ZnO and BeZnO due to the splitting of degenerate bands and leftward moving of energy bands.
Keywords :
ZNO , BeZnO , Band gap , First-principle calculation , Interstitial hydrogen
Journal title :
International Journal of Hydrogen Energy
Serial Year :
2013
Journal title :
International Journal of Hydrogen Energy
Record number :
1862702
Link To Document :
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