Title of article :
Silicon carbide and silicon carbide-based structures: The physics of epitaxy
Author/Authors :
Masri، نويسنده , , Pierre، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2002
Abstract :
In this review, we discuss silicon carbide growth problems and the physics of epitaxy of this material in many aspects of homoepitaxy and heteroepitaxy.
Journal title :
Surface Science Reports
Journal title :
Surface Science Reports
