Fullerene adsorption on semiconductor surfaces

The adsorption of C60 and its “siblings”–including the higher fullerenes, endofullerenes, substitutionally doped species, and functionalised derivatives–on semiconductor surfaces has been studied for almost two decades. A broad range of techniques, spanning scanning probe microscopy (and the associated single molecule characterisation tools) to synchrotron-based methods such as photoemission and X-ray absorption spectroscopy, has been used to elucidate very many aspects of the chemical behaviour, electronic properties, and self-assembly of fullerenes on elemental and compound semiconductor surfaces. The fullerene-on-silicon system has also played a pivotal role in the development of room temperature molecular manipulation protocols. Here we review key advances (both experimental and theoretical) in our understanding of the fullerene-semiconductor interface over the last eighteen years. While the interaction of fullerene molecules with clean and adsorbate-covered silicon surfaces forms a key focus of the review, adsorption on germanium, III–V (GaAs, InP), and IV–VI (GeS) surfaces is also covered.