Author/Authors :
Chen، نويسنده , , S.J. and Y.C.Liu and Shao، نويسنده , , C.L. and Lu، نويسنده , , Y.M. and Zhang، نويسنده , , J.Y. and Shen، نويسنده , , D.Z. and Fan، نويسنده , , X.W.، نويسنده ,
Abstract :
P-passivated nanocrystalline ZnO films on InP substrates were prepared by thermal oxidation of Zn films. By a simple thermal annealing cycle process, uniform photoluminescence (PL) samples with controllable visible emission and intense UV emission were obtained at different annealing conditions. Through a detailed study of the photoluminescence spectra of P-passivated nano-ZnO films vs the annealing-temperature and annealing-time, it is shown that applying different annealing time or temperatures provides a very practical technique to control the deep-level defect emission. A core-shell structure model of the surface passivation was helpfully used to discuss the P-passivation mechanism.
