Title of article :
Electronic structures of InTaO4, a promising photocatalyst
Author/Authors :
Chang، نويسنده , , Hyunju and Kong، نويسنده , , Kijeong and Choi، نويسنده , , Yong Soo and In، نويسنده , , Eunjeong and Choi، نويسنده , , Youngmin and Baeg، نويسنده , , Jin-Ook and Moon، نويسنده , , Sang-Jin، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
4
From page :
449
To page :
452
Abstract :
We have carried out the first-principle electronic structure calculations based on density functional theory on InTaO4 in various states, such as pristine, oxygen vacancy, and Ni-doped states. We have found that oxygen vacancy can induce the gap states and Ni-doping can narrow the band gap by generating additional states on the top of the valence band as well as on the top of the gap states. From our calculated results, we have shown that oxygen vacancy can do a crucial role to generate gap states which let InTaO4 absorb the visible light.
Journal title :
Chemical Physics Letters
Serial Year :
2004
Journal title :
Chemical Physics Letters
Record number :
1913247
Link To Document :
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