Author/Authors :
Chen، نويسنده , , L.L. and He، نويسنده , , H.P. and Ye، نويسنده , , Z.Z. and Zeng، نويسنده , , Y.J. and Lu، نويسنده , , J.G. and Zhao، نويسنده , , B.H. and Zhu، نويسنده , , L.P.، نويسنده ,
Abstract :
Li-doped ZnO thin films were prepared on glass substrates by DC reactive magnetron sputtering. The influence of post-annealing temperature on the electrical, structural, and optical properties of the films was investigated. A conversion from p-type conduction to n-type in a range of temperature was confirmed by Hall measurement. The optimal p-type conduction is achieved at the annealing temperature of 500 °C with a resistivity of 57 Ω cm, carrier concentration of 1.07 × 1017 cm−3 and Hall mobility of 1.03 cm2 V−1 s−1. From the temperature-dependent PL analysis, the energy level of LiZn acceptor was determined to be ∼140 meV above the valence band.
