Title of article :
The grain-boundary-related optical and electrical properties in polycrystalline p-type ZnO films
Author/Authors :
Zhang، نويسنده , , C.Y. and Li، نويسنده , , X.M. and Gao، نويسنده , , X.D. and Zhao، نويسنده , , J.L. and Wan، نويسنده , , K.S. and Bian، نويسنده , , J.M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
5
From page :
448
To page :
452
Abstract :
Cathodoluminescence spectra and electrical properties of the N doped and N–Al codoped p-type ZnO films and the dependence of these two properties on the post-annealing were investigated. Spectral analyses show that the intensity of the green emission strongly depends on the annealing ambient and closely relates with the width of the electron depletion region at the particle boundary. The conducting type and electrical properties of N doped and N–Al codoped ZnO films are greatly affected by the annealing process. The grain boundary effect was proposed to explain the green emission behavior and the p-type conduction in polycrystalline ZnO based films.
Journal title :
Chemical Physics Letters
Serial Year :
2006
Journal title :
Chemical Physics Letters
Record number :
1917858
Link To Document :
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