Title of article :
Negative capacitance caused by electron injection through interfacial states in organic light-emitting diodes
Author/Authors :
Bisquert، نويسنده , , Juan and Garcia-Belmonte، نويسنده , , Germà and Pitarch، نويسنده , , ءngeles and Bolink، نويسنده , , Henk J.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
8
From page :
184
To page :
191
Abstract :
The negative capacitance frequently observed at low frequencies in organic light-emitting diodes (LEDs) is explained as a signature of sequential electron injection at the organic/metal interface first to states in the bandgap in the dipole layer and then to bulk states. The negative capacitance occurs when the interfacial states depart from equilibrium with the metal Fermi level due to an increasing rate of hopping to the bulk states. A simple kinetic model compares well with the experimental results and provides a new tool to investigate interfacial properties for improving the performance of organic LEDs.
Journal title :
Chemical Physics Letters
Serial Year :
2006
Journal title :
Chemical Physics Letters
Record number :
1918378
Link To Document :
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