Author/Authors :
Lavrentiev، نويسنده , , Vasily and Naramoto، نويسنده , , Hiroshi and Narumi، نويسنده , , Kazumasa and Sakai، نويسنده , , Seiji and Avramov، نويسنده , , Pavel، نويسنده ,
Abstract :
A study of 100 keV Co+-implanted C60 films with Rutherford Backscattering and Raman spectroscopy has revealed the pronounced cobalt translation from the surface layer of amorphous carbon into the deeper crystalline fullerene due to post-implantation annealing at 300 °C. Carbon density gradient along the film depth is discussed as a driving force of this effect. Cobalt deficit in the doped fullerene layer, detected by means of ion beam analysis, suggests ionization of the C60 molecules under the collisions with 2 MeV He+ ions.
