Synthesis, X-ray, spectroelectrochemical, and theoretical studies of a tricyanovinyl-capped quaterthiophene: A correlation of semiconductor performance with physical properties

A new tricyanovinyl-substituted quaterthiophene compound has been synthesized and characterized by X-ray crystallography, cyclic voltammetry, spectroelectrochemistry, and theoretical analysis. The tricyanovinyl group provides a dramatic change in the physical properties of the quaterthiophene. The molecule has been tested as the semiconducting layer in an n-type thin-film transistor. The device properties correlate well with the solid-state packing, spectroelectrochemical results, and theoretical modeling.