Author/Authors :
Yamaguchi، نويسنده , , Masahiro and Katayama، نويسنده , , Kenji and Shen، نويسنده , , Qing and Toyoda، نويسنده , , Taro and Sawada، نويسنده , , Tsuguo، نويسنده ,
Abstract :
The dynamics of excited carriers in porous silicon were investigated using the near-field heterodyne transient grating method, and the fundamental processes related to light emission were determined. The processes include trapping to surface states and two-body recombination of excited carriers, with trapping being the dominant source of light emission. Since nonlinear processes, namely two-body recombination, are included, it is necessary to measure the pump intensity dependence of the transient responses and to analyze them with a nonlinear differential equation in order to obtain accurate decay times.
