Author/Authors :
Naguib، نويسنده , , Nevin N. and Elam، نويسنده , , Jeffrey W. and Birrell، نويسنده , , James and Wang، نويسنده , , Jian and Grierson، نويسنده , , David S. and Kabius، نويسنده , , Bernd and Hiller، نويسنده , , Jon M. and Sumant، نويسنده , , Anirudha V. and Carpick، نويسنده , , Robert W. and Auciello، نويسنده , , Orlando and Carlisle، نويسنده , , John A.، نويسنده ,
Abstract :
Extremely smooth (6 nm RMS roughness over 4 μm2), thin (100 nm), and continuous ultrananocrystalline diamond (UNCD) films were synthesized by microwave plasma chemical vapor deposition using a 10 nm tungsten (W) interlayer between the silicon substrate and the diamond film. These UNCD films possess a high content of sp3-bonded carbon. The W interlayer significantly increased the initial diamond nucleation density, thereby lowering the surface roughness, eliminating interfacial voids, and allowing thinner UNCD films to be grown. This structural optimization enhances the films’ properties and enables its integration with a wide variety of substrate materials.
