Title of article :
Nanoscale electrodeposition of Al on n-Si(1 1 1) : H from an ionic liquid
Author/Authors :
Aravinda، نويسنده , , C.L. and Burger، نويسنده , , B. and Freyland، نويسنده , , W.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
5
From page :
271
To page :
275
Abstract :
The H-terminated Si(1 1 1)/ionic liquid interface has been imaged by scanning tunneling microscopy (STM) for the first time. Employing the ionic liquid AlCl 3 – [ C 4 mim ] + nanoscale electrodeposition of Al on Si(1 1 1) : H substrates has been investigated by in situ electrochemical scanning probe techniques at room temperature. No underpotential deposition of Al is found. Nucleation of Al begins at the Nernst potential with the formation of large islands spread all over the substrate. Under the influence of the scanning STM tip, these islands are easily disturbed which makes it difficult to image the initial stages of electrochemical phase formation. We explain this by a relatively high mobility of the islands due to the poor wetting of Al on the Si(1 1 1) : H substrate. The 3D growth of Al on Si(1 1 1) : H follows a Volmer–Weber growth mode. Scanning tunneling spectra of larger Al clusters show clearly metallic characteristics.
Journal title :
Chemical Physics Letters
Serial Year :
2007
Journal title :
Chemical Physics Letters
Record number :
1921160
Link To Document :
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