Author/Authors :
May، نويسنده , , P.W. and Ludlow، نويسنده , , W.J. and Hannaway، نويسنده , , M. J. Heard، نويسنده , , PJ and Smith، نويسنده , , J.A. and Rosser، نويسنده , , K.N.، نويسنده ,
Abstract :
We present data showing how the electrical conductivity and Raman spectra of boron-doped CVD diamond films vary with both B content and crystallite size, for microcrystalline diamond (MCD), facetted nanocrystalline diamond (f-NCD) and ‘cauliflower’ diamond (c-NCD). The position of the Lorentzian contribution to the 500 cm−1 Raman feature was used to estimate the B content. This underestimated the SIMS concentration of B by a factor of ∼5 for the f-NCD and c-NCD films, but remained reasonably accurate for MCD films. One explanation for this is that most of the B incorporates at the grain boundaries and not in substitutional sites.