Author/Authors :
Ngan، نويسنده , , Vu Thi and Gopakumar، نويسنده , , G. and Hue، نويسنده , , Tran Thanh and Nguyen، نويسنده , , Minh Tho، نويسنده ,
Abstract :
The electronic structure of indigo was determined using B3LYP functional and different basis sets. The first triplet 3Au (C2h) state of indigo is characterized by the singlet–triplet gaps of ΔET–S(vertical) = 1.23 eV and ΔET–S(adiabatic) = 0.95 eV (recent experiment: 1.04 ± 0.1 eV). The vertical S1–T1 gap amounts to 1.0 eV (exptl: 0.91 ± 0.1 eV). The electron localization function (ELF) and spin density analysis show that the singlet–triplet excitation is accompanied by a migration of electrons from the CC bond and N-atoms to the adjacent C–C and C–N bonds. A low ionization energy is confirmed for indigo IEa = 6.9 eV.