Author/Authors :
Sugiyama، نويسنده , , Hiroyuki and Nagano، نويسنده , , Takayuki and Nouchi، نويسنده , , Ryo and Kawasaki، نويسنده , , Naoko Yuno-Ohta، نويسنده , , Yohei and Imai، نويسنده , , Kumiko and Tsutsui، نويسنده , , Michiko and Kubozono، نويسنده , , Yoshihiro and Fujiwara، نويسنده , , Akihiko، نويسنده ,
Abstract :
The C76 field-effect transistor (FET) showed n-channel normally-off like behavior with n-channel field-effect mobility, μn, of 3.9 × 10−4 cm2 V−1 s−1, and the highest on–off ratio, 125, among higher fullerenes FETs. The carrier transport in the C76 FET followed a thermally-activated hopping transport model. The normally-off like properties of C76 FET could be reasonably explained in terms of the electronic structure of thin films determined by photoemission spectroscopy.
