Title of article
Acceptor related photoluminescence from ZnO:Sb nanowires fabricated by chemical vapor deposition method
Author/Authors
Zang، نويسنده , , C.H. and Zhao، نويسنده , , D.X. and Tang، نويسنده , , Y. and Guo، نويسنده , , Z. and Zhang، نويسنده , , J.Y. and Shen، نويسنده , , D.Z. and Liu، نويسنده , , Y.C.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
4
From page
148
To page
151
Abstract
Single-crystal Sb doped ZnO nanowires were fabricated on Si (1 0 0) substrate by a chemical vapor deposition method. The photoluminescence properties of ZnO nanowires were studied with the temperature ranging from 81 to 306 K. At 81 K, the recombination of the acceptor-bound exciton was predominant in PL spectrum, which was attributed to the transition of the (SbZn–2VZn) complex bound exciton. The activation of A0X and the acceptor binding energy had been calculated to be 16.8 and 168 meV, respectively.
Journal title
Chemical Physics Letters
Serial Year
2008
Journal title
Chemical Physics Letters
Record number
1923483
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