Electrical conductivity measurement of silicon wire prepared by CVD

The electrical resistivity of a silicon nanowire formed from Si2H6 by CVD was measured using microprobes equipped with SEM. The resistivity of 6.58 × 105 Ω cm at room temperature was obtained from the current–voltage (I–V) curve for the wire with both ends fused to the probes. The non-linear I–V curve measured only by contacting the wire with the probes could be explained by the resistivity in a series of silicon and dielectric thin oxide films formed on the silicon nanowires.