Inkjet-defined field-effect transistors from chemical vapour deposited graphene

In this work, inkjet printing methods are used to create graphene field effect transistors with mobilities up to 3000 cm2 V−1 s−1. A commercially-available chromium-based ink is used to define the device channel by inhibiting chemical vapour deposition of graphene in defined regions on a copper catalyst. We report on the patterned graphene growth using optical and electronic microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. Silver nanoparticle ink is used to create electrical contacts to the defined graphene regions. The resulting devices were characterised by electrical transport measurements at room temperature. As a result we are able to fabricate high-performance graphene field effect transistors entirely defined by a commercial inkjet printer with channel lengths of 50 μm.