Author/Authors :
Chen، نويسنده , , Hao and Zhuge، نويسنده , , Fei and Fu، نويسنده , , Bing and Li، نويسنده , , Jun and Wang، نويسنده , , Jun and Wang، نويسنده , , Weigao and Wang، نويسنده , , Qin and Li، نويسنده , , Le and Li، نويسنده , , Fagen and Zhang، نويسنده , , Haolei and Liang، نويسنده , , Lingyan and Luo، نويسنده , , Hao and Wang، نويسنده , , Mei and Gao، نويسنده , , Junhua and Cao، نويسنده , , Hongtao and Zhang، نويسنده , , Hong and Li، نويسنده , , Zhicheng، نويسنده ,
Abstract :
An amorphous carbon thin film, with through-pores of several tens of nanometers in size, has been synthesized by annealing magnetron sputtered nitrogen-doped carbon thin films at elevated temperature in an inert atmosphere. Based on this nanoporous carbon film, we first report forming-free resistive switching in a two terminal device containing ready-made metal nanofilaments. Such nanoporous carbon-based resistance memory device shows low operation voltages and good endurance and retention performance.
