Author/Authors :
Konkin، نويسنده , , A. and Ritter، نويسنده , , U. and Scharff، نويسنده , , P. and Mamin، نويسنده , , G. and Aganov، نويسنده , , A. and Orlinskii، نويسنده , , S. and Krinichnyi، نويسنده , , V. and Egbe، نويسنده , , D.A.M. and Ecke، نويسنده , , G. and Romanus، نويسنده , , H.، نويسنده ,
Abstract :
Anion–cation radical formation in solid films of M3EH-PPV blended with C60-PCBM, C120-O-PCBM and C60-MDHE, C120-O-MDHE under diode laser (532 nm) and Xe-lamp light excitation studied by means of X,W-band at temperatures 30–80 K is reported. Subsequent high frequency W-band ESR data demonstrate the reproducible, but variable effect of appreciable dispersion (D) contribution in the ESR spectral line for the di-fullerene anion radicals. It is suggested that the increase of the D part relative to the absorption (A) in the summarized ESR absorption line in blends with difullerenes is caused by the higher value of difullerene medium conductivity. The obtained data are quantitatively discussed by the D/A ∼ F(d/δ) functional dependence in approach of plane film geometry, where d is the film thickness and δ is the skin-depth. The influence of ν-dependent δ at D/A value has been checked using X-band LESR.
