Author/Authors :
Pan، نويسنده , , X.H. and Guo، نويسنده , , W. and Ye، نويسنده , , Z.Z. and Liu، نويسنده , , B. and Che، نويسنده , , Y. and Nelson، نويسنده , , C.T. and Zhang، نويسنده , , Y. and Tian، نويسنده , , Douglas W. and Schlom، نويسنده , , D.G. and Pan، نويسنده , , X.Q.، نويسنده ,
Abstract :
Zn1−xMgxO thin films are epitaxially grown on (1 1 1) Si substrates using intervening epitaxial Lu2O3 buffer layers by pulsed laser deposition. Lu2O3 buffer layer on Si substrate is essential to the Zn1−xMgxO epitaxial growth. X-ray diffraction, transmission electron microscopy, atomic force microscopy and photoluminescence measurements reveal that the Zn1−xMgxO films have high quality structural and optical properties. The films with thickness of 650 nm have a resistivity of 4.18 Ω cm, a Hall mobility of 16.97 cm2 V−1 s−1, and an electron concentration of 8.80 × 1016 cm−3 at room temperature.
