Title of article :
Vanadium-doped small silicon clusters: Photoelectron spectroscopy and density-functional calculations
Author/Authors :
Xu، نويسنده , , Hong-Guang and Zhang، نويسنده , , Zeng-Guang and Feng، نويسنده , , Yuan and Yuan، نويسنده , , Jinyun and Zhao، نويسنده , , Yuchao and Zheng، نويسنده , , Weijun، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Pages :
5
From page :
204
To page :
208
Abstract :
Vanadium-doped small silicon clusters, VSi n - and V 2 Si n - (n = 3–6), have been studied by anion photoelectron spectroscopy. The vertical detachment energies (VDEs) and adiabatic detachment energies (ADEs) of these clusters were obtained from their photoelectron spectra. We have also conducted density-functional calculations of VSi n - and V 2 Si n - clusters and determined their structures by comparison of theoretical calculations with experimental results. Our results show that two V atoms in V 2 Si n - clusters tend to form a strong V–V bond. V 2 Si 6 - has D3d symmetry with the six Si atoms forming a chair like six-membered ring similar to the ring in cyclohexane and the two vanadium atoms are joined with a δ bond.
Journal title :
Chemical Physics Letters
Serial Year :
2010
Journal title :
Chemical Physics Letters
Record number :
1928556
Link To Document :
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