Author/Authors :
Chen، نويسنده , , Chih-Han and Chang، نويسنده , , Shoou-Jinn and Chang، نويسنده , , Sheng-Po and Tsai، نويسنده , , Yao-Ching and Chen، نويسنده , , I-Cherng and Hsueh، نويسنده , , Ting-Jen and Hsu، نويسنده , , Cheng-Liang، نويسنده ,
Abstract :
Vertical zinc oxide nanowires, used as electron emitters, were synthesized on ZnO:Ga/glass substrate by a vapor–liquid–solid process without a catalyst. The nanowires, 5 μm long and 50–250 nm in diameter, were grown with a preferred (0 0 2) orientation and a small XRD full-width at half-maximum intensity. Illumination of ZnO nanowires by UV improved their field emission attributes, reducing their turn-on electric field to 2.1 V/μm at a current density of l μA/cm2. This phenomenon is attributed to the generation of a large number of hole–electron pairs by UV illumination.
