Title of article :
Multilayer graphene, Moiré patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC
Author/Authors :
Xu، نويسنده , , David P. and Qi، نويسنده , , D. and Schoelz، نويسنده , , J.K. and Thompson، نويسنده , , J. and Thibado، نويسنده , , P.M. and Wheeler، نويسنده , , V.D. and Nyakiti، نويسنده , , L.O. and Myers-Ward، نويسنده , , R.L. and Eddy Jr.، نويسنده , , C.R. and Gaskill، نويسنده , , D.K. and Neek-Amal، نويسنده , , M. and Peeters، نويسنده , , F.M.، نويسنده ,
Abstract :
Epitaxial graphene is grown on a non-polar n+ 6H-SiC m-plane substrate and studied using atomic scale scanning tunneling microscopy. Multilayer graphene is found throughout the surface and exhibits rotational disorder. Moiré patterns of different spatial periodicities are found, and we found that as the wavelength increases, so does the amplitude of the modulations. This relationship reveals information about the interplay between the energy required to bend graphene and the interaction energy, i.e. van der Waals energy, with the graphene layer below. Our experiments are supported by theoretical calculations which predict that the membrane topographical amplitude scales with the Moiré pattern wavelength, L as L - 1 + α L - 2 .
