Title of article :
Stable C20−nSin heterofullerenes (n ⩽ 8): A DFT approach
Author/Authors :
Momeni، نويسنده , , M.R. and Shakib، نويسنده , , F.A.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Abstract :
DFT calculations are applied to devise some stable C20−nSin heterofullerenes with n ⩽ 8. Si atoms are doped at eight selected symmetric positions in such a way that all of them are completely isolated from each other. In contrast to previous reports, none of the computed heterofullerenes collapses to open cage structures. High charge transfer on the surfaces of our stable heterofullerenes provokes further investigations on their possible application for hydrogen storage.
Journal title :
Chemical Physics Letters
Journal title :
Chemical Physics Letters