Title of article :
Negative differential resistance in electrografted layer of N-(2-(4-diazoniophenyl)ethyl)-N′-hexylnaphthalene-1,8:4,5-tetracarboxydiimide tetrafluoroborate on Si
Author/Authors :
Koiry، نويسنده , , S.P. and Aswal، نويسنده , , D.K. and Jousselme، نويسنده , , B. and Majumdar، نويسنده , , C. and Gupta، نويسنده , , S.K. and Palacin، نويسنده , , S. and Yakhmi، نويسنده , , J.V.، نويسنده ,
Abstract :
We demonstrate electrochemical deposition of a specially designed and synthesized σ–π–σ molecular architecture, that is, N-(2-(4-diazoniophenyl)ethyl)-N′-hexylnaphthalene-1,8:4,5-tetracarboxydiimide tetrafluoroborate (DHTT), on H-terminated Si substrates. Electrografting of DHTT on Si at 5 and 27 °C leads to the formation of monolayer and multilayers, respectively. DHTT monolayer exhibits a pronounced negative differential resistance (NDR) in the current–voltage characteristics with peak-to-valley current ratio of ∼10. Theoretical simulations studies show that the observed NDR effect is intrinsic to the DHTT molecules. NDR effect has been explained using the ab initio molecular-orbital theoretical calculations.
