Title of article :
Room-temperature ferromagnetism of vanadium-doped 6H–SiC
Author/Authors :
Lin، نويسنده , , Shenghuang and Chen، نويسنده , , Zhiming and Liang، نويسنده , , Peng and Jiang، نويسنده , , Dong and Xie، نويسنده , , Huajie، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Pages :
3
From page :
56
To page :
58
Abstract :
Semiconductors doped with magnetic ions, also known as dilute magnetic semiconductors, reveal both semiconducting and ferromagnetic. In this Letter, we prepared vanadium-doped 6H–SiC single crystals for exhibiting ferromagnetism characteristic measured by superconducting quantum interference device (SQUID) magnetometer. Our work demonstrates that moderate doping of vanadium carbide powder into 6H–SiC is a novel attempt for finding ferromagnetism feature. And the testing results show that the observed magnetic signal is possibly contributing to V element. This phenomenon can be explained by sp-d exchange mechanism, and offers an experimental data for possibility of doping nonmagnetic atoms to control the local moments in wide band-gap semiconductors.
Journal title :
Chemical Physics Letters
Serial Year :
2010
Journal title :
Chemical Physics Letters
Record number :
1929776
Link To Document :
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