Title of article :
Doping effects on the electric response properties of silicon clusters: A global structure–property investigation of AlSin−1 clusters (n = 3–10)
Author/Authors :
Karamanis، نويسنده , , Panaghiotis and Marchal، نويسنده , , Rémi and Carbonnière، نويسنده , , Philippe and Pouchan، نويسنده , , Claude، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Pages :
6
From page :
59
To page :
64
Abstract :
The influence of a doping agent on the static dipole (hyper)polarizabilities of small silicon clusters up to 10 atoms has been systematically investigated by means of density functional theory. The obtained results demonstrate that the magnitudes of the first dipole hyperpolarizabilities are dominated by the cluster’s binding site. As a result, exohedral cluster doping leads to more hyperpolarizable species than substitutional doping. Also, our study verifies that regardless the type of cluster–dopant interaction (exohedral or substitutional) a considerably more polarizable doping agent generally increases the total polarizability of the system.
Journal title :
Chemical Physics Letters
Serial Year :
2010
Journal title :
Chemical Physics Letters
Record number :
1930362
Link To Document :
بازگشت