Title of article :
Electronic spectrum of SnSi+: A MRDCI study
Author/Authors :
Chakrabarti، نويسنده , , Susmita and Das، نويسنده , , Kalyan Kumar، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Pages :
6
From page :
197
To page :
202
Abstract :
Multireference configuration interaction calculations are performed on the SnSi+ ion to study its electronic spectrum. Potential energy curves of the ground and low-lying states up to 35 000 cm−1 are constructed. Spectroscopic constants (Te, re, ωe) of 18 bound states are calculated. The spin–orbit coupling is also included in the calculation to study its effect on the potential energy curves and spectroscopic properties of the ion. Transition dipole moments and hence radiative lifetimes of several dipole-allowed and spin-forbidden transitions are computed. Transitions such as 4 4 Σ - –X4Σ− and 4Π–X4Σ− are predicted to be highly probable, while the spin-forbidden transitions are weak.
Journal title :
Chemical Physics Letters
Serial Year :
2011
Journal title :
Chemical Physics Letters
Record number :
1930860
Link To Document :
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