Title of article :
Surface-chemistry-sensitive spectral features of In–Ga–Zn–O thin film: Cleaned, air-passivated, and sputter-phase-separated surfaces
Author/Authors :
Kang، نويسنده , , Se Jun and Baik، نويسنده , , Jae Yoon and Thakur، نويسنده , , Anup and Kim، نويسنده , , Hyeong-Do and Shin، نويسنده , , Hyun-Joon and Chung، نويسنده , , JaeGwan and Lee، نويسنده , , Jaecheol and Lee، نويسنده , , JaeHak، نويسنده ,
Abstract :
The photoelectron spectral features and corresponding energy band diagrams of amorphous indium gallium zinc oxide (a-IGZO) thin films were investigated for different surface chemistries. Cleaned-IGZO surface had a deep subgap state (DSS), the binding energy (BE) of which expanded to ∼1.5 eV. When stored in air, IGZO surface became contaminant passivated and DSS became negligible. Sputtering resulted in phase separation of surface into metallic In and lesser In and Zn containing IGZO. Compared with IGZO, the air-passivated surface and phase-separated surface, respectively, had a more weakly conducting environment and a higher BE spectral shift.
