• Title of article

    Ab initio simulations of silicene hydrogenation

  • Author/Authors

    Osborn، نويسنده , , Tim H. and Farajian، نويسنده , , Amir A. and Pupysheva، نويسنده , , Olga V. and Aga، نويسنده , , Rachel S. and Lew Yan Voon، نويسنده , , L.C.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2011
  • Pages
    5
  • From page
    101
  • To page
    105
  • Abstract
    Silicene, a silicon equivalent of graphene, is a newly synthesized nanostructure with unique features and promising potential. Using density functional theory, the geometries and energetics of partially hydrogenated silicene (hydrogenation ratios between 3.1 and 100 atom%) are calculated. We find that the hydrogenation energy increases with the hydrogenation ratio, reaching 3.01 eV/H for complete hydrogenation. Molecular dynamics simulations reveal the stability of the adsorption configurations. Our results show that partial and patterned hydrogenation, achievable through exposing silicene to hydrogen gas with various densities and/or masking techniques, provide the attractive possibility of metal/semiconductor/insulator functionality within the same silicon nanosheet.
  • Journal title
    Chemical Physics Letters
  • Serial Year
    2011
  • Journal title
    Chemical Physics Letters
  • Record number

    1931602