Title of article :
Anisotropic charge injection and transport in the cross stacking crystal of distyrylbenzene derivative and a possible new device structure
Author/Authors :
Liu، نويسنده , , Dandan and Xu، نويسنده , , Hai and Liu، نويسنده , , Xiaodong and Xie، نويسنده , , Zengqi and Yang، نويسنده , , Bing and Ma، نويسنده , , Yuguang، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Pages :
7
From page :
174
To page :
180
Abstract :
Anisotropic charge transport in organic materials is currently receiving increasing attention. Extraordinary anisotropic hole and electron transport with nearly balanced mobility are predicted computationally for the first time in the cross stacking crystal of trans-2,5-diphenyl-1,4-distyrylbenzene (trans-DPDSB). The hole and electron transports are along the crystallographic c and b axes, respectively. Based on the transport property, a possible novel device structure is proposed to perform the three-dimensional (3D) carrier recombination, which enables the tunable hole and electron injection from different crystal planes. Meanwhile, the hole and electron transport along their own independent transport channels with the largest mobility.
Journal title :
Chemical Physics Letters
Serial Year :
2011
Journal title :
Chemical Physics Letters
Record number :
1932006
Link To Document :
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