Title of article
Anisotropic charge injection and transport in the cross stacking crystal of distyrylbenzene derivative and a possible new device structure
Author/Authors
Liu، نويسنده , , Dandan and Xu، نويسنده , , Hai and Liu، نويسنده , , Xiaodong and Xie، نويسنده , , Zengqi and Yang، نويسنده , , Bing and Ma، نويسنده , , Yuguang، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
7
From page
174
To page
180
Abstract
Anisotropic charge transport in organic materials is currently receiving increasing attention. Extraordinary anisotropic hole and electron transport with nearly balanced mobility are predicted computationally for the first time in the cross stacking crystal of trans-2,5-diphenyl-1,4-distyrylbenzene (trans-DPDSB). The hole and electron transports are along the crystallographic c and b axes, respectively. Based on the transport property, a possible novel device structure is proposed to perform the three-dimensional (3D) carrier recombination, which enables the tunable hole and electron injection from different crystal planes. Meanwhile, the hole and electron transport along their own independent transport channels with the largest mobility.
Journal title
Chemical Physics Letters
Serial Year
2011
Journal title
Chemical Physics Letters
Record number
1932006
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