Title of article :
Narrow in-gap states in doped
Author/Authors :
Casas-Cabanas، نويسنده , , Montserrat and Frésard، نويسنده , , Marion and Lüders، نويسنده , , Ulrike and Frésard، نويسنده , , Raymond and Schuster، نويسنده , , Cosima and Schwingenschlِgl، نويسنده , , Udo، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Pages :
3
From page :
29
To page :
31
Abstract :
Based on XRD data testifying that the M ions occupy substitutional sites, transmittance measurement are discussed in comparison to electronic structure calculations for M-doped Al 2 O 3 with M = V, Mn, and Cr. The M 3d states are found approximatively 2 eV above the top of the host valence band. The fundamental band gap of Al 2 O 3 is further reduced in the V and Mn cases due to a splitting of the narrow band at the Fermi energy. Nevertheless the measured transmittance in the visible range remains high in all three cases.
Journal title :
Chemical Physics Letters
Serial Year :
2011
Journal title :
Chemical Physics Letters
Record number :
1932081
Link To Document :
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