Controlling the electrical property of highly transparent conducting film of Zn coated Al doped ZnO by mechano-chemical pathway of face-to-face annealing

We present a mechano-chemical technique to obtain highly transparent and conducting Al doped ZnO (AZO) film by annealing two Zn coated AZO films in a face-to-face condition in Ar. This transparent conducting oxide (TCO) layer shows a carrier concentration of 2.29 × 1021 cm−3, mobility of 24.11 cm2/Vs and resistivity of ∼10−4 Ω cm for 15 nm Zn coated film. The p-Si/AZO heterojunction shows a high rectification ratio of 1.1 × 103. Under white light illumination, the forward current of the junction is enhanced by ∼1 order of magnitude compared to that under dark condition implying its promising photodiode applications.