Title of article :
Comprehensive investigations on the feasibility of nitrogen as a p-type dopant in ZnO
Author/Authors :
Li، نويسنده , , Ping and Deng، نويسنده , , Shenghua and Liu، نويسنده , , Guohong and Hou، نويسنده , , Kui، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Pages :
4
From page :
92
To page :
95
Abstract :
It is controversial whether nitrogen can dope ZnO p-type or not. According to our first-principles calculations, no defects or defect complexes can result in p-type conductivity in ZnO. NO and NZn–2Oi have deep transition levels, while NZn–2VZn has a high formation energy at the valence band maximum (VBM), rendering all of them unlikely to contribute to the p-type conductivity. Besides, NZn will heavily compensate the p-type doping of ZnO in O-rich conditions, while (N2)O and (NO)O will do that in Zn-rich conditions. All these results raise serious questions about the feasibility of nitrogen as a p-type dopant.
Journal title :
Chemical Physics Letters
Serial Year :
2012
Journal title :
Chemical Physics Letters
Record number :
1933479
Link To Document :
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