Memory effect in organic transistor: Controllable shifts in threshold voltage

A silver nanoparticles self-assembled monolayer was incorporated in pentacene field-effect transistors and their memory effects were investigated using the current–voltage measurement. The results showed that there was a significant shift in threshold voltage under different writing and erasing voltages applied on the gate electrode and the memory window changed accordingly with mentioned applied voltage bias. Charge retention time was estimated up to 2000 s even under different biased voltages. On the other hand, the reference OFETs without a nanoparticle layer exhibited no memory effects. Further, accelerated aging study of the organic transistors with nanoparticles revealed the conservation of memory window.